A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: Part I (high frequencies)

被引：23

作者：

Djezzar, B ^{[1
]}

Oussalah, S ^{[1
]}

Smatti, A ^{[1
]}

机构：

[1] Ctr Dev Technol Avancees, Microelect Div, Algiers 16303, Algeria

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 04期

关键词：

charge-pumping; MOSFETs; oxide-trap based on charge-pumping (OTCP); radiation effects; traps;

D O I：

10.1109/TNS.2004.832549

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we propose a new extraction method of radiation-induced oxide-trap density (DeltaN(ot)), called Oxide-Trap based on Charge-Pumping (OTCP). This part presents the HF-OTCP method, which relies on high-frequency (HF) standard charge-pumping measurement. By applying an HF gate voltage signal, we avoid the border-trap effect in CP current (I-cp) measurements. Hence, I-cp will be only due to the interface-trap contribution. We establish, using the HF-OTCP method, that DeltaN(ot) is only dependent on DeltaV(th) (threshold voltage shift) and DeltaI(cpm) (increase of maximum CP current), where DeltaI(cpm) is caused by radiation-induced interface-trap increase (DeltaN(it)). We also clearly show that DeltaV(th) and DeltaI(cpm) can be obtained from lateral and vertical shifts of Elliot's charge-pumping curves, respectively. Thus, this new procedure allows the determination of DeltaN(ot) without needing any additional techniques. Finally, this procedure can be used in rapid hardness assurance test to evaluate both radiation-induced oxide and interface traps.

引用

页码：1724 / 1731

页数：8

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