Charge carrier photogeneration yield in amorphous materials with long-range potential fluctuations

被引：4

作者：

Emelianova, EV

Arkhipov, VI

Kasap, SO

Adriaenssens, GJ

机构：

[1] Katholieke Univ Leuven, SPL, B-3001 Heverlee, Belgium

[2] Univ Marburg, IPNMC, D-35032 Marburg, Germany

[3] Univ Saskatchewan, EMRL, Saskatoon, SK S7N 5A9, Canada

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2002年 / 299卷

关键词：

D O I：

10.1016/S0022-3093(01)01193-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Random intrinsic electrostatic potentials cause local intrinsic electric fields that must affect the Onsager probability, of geminate pair dissociation. If the intrinsic fluctuating field is strong enough the dissociation yield could be close to unity even at weak external electric fields and at low temperatures. An analytic model describing the effect of intrinsic field and potential fluctuations on the carrier photogeneration yield is formulated and compared to observed behavior in a-Si:H and a-Se. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：305 / 309

页数：5

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