Enhanced enzyme activity in silicon integrated enzyme reactors utilizing porous silicon as the coupling matrix

被引:99
作者
Laurell, T [1 ]
Drott, J [1 ]
Rosengren, L [1 ]
Lindstrom, K [1 ]
机构
[1] UPPSALA UNIV,DEPT TECHNOL,DIV ELECT,S-75121 UPPSALA,SWEDEN
关键词
porous silicon; enzyme reactor; micro total analysis system (mu TAS); glucose oxidase;
D O I
10.1016/0925-4005(96)80061-X
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The performance of porous silicon as a coupling matrix for silicon integrated enzyme reactors has been investigated. A porous silicon layer in a wafer is expected to yield an increased catalytic activity when coupling an enzyme to the wafer due to the surface enlargement of the porous structure. The porous silicon layer is obtained by anodizing a 1 cm x 1 cm silicon die in a hydrofluoric acid/ethanol mixture at a constant current density of 10, 50 or 100 mA cm(-2) for 50 min. Glucose oxidase is immobilized on the porous matrix of three dice and the enzyme activity of the silicon samples is monitored using a colorimetric assay. As a reference sample a polished die is also submitted to the enzyme immobilization. The three porous dice display higher glucose turn-over rates than the unetched reference die. Samples etched at lower current densities show increased turn-over rates. The maximum rise in turn-over rate is more than 30 times for the 10 mA cm(-2) sample compared with the reference die. Porous silicon has the potential of being incorporated in a micro total analysis system (mu TAS) to give highly efficient enzyme reactors.
引用
收藏
页码:161 / 166
页数:6
相关论文
共 19 条
  • [1] ARQUINT P, 1994, THESIS U NEUCHATEL S
  • [2] BRANEBJERG J, 1991, IEEE MICRO ELECTRO MECHANICAL SYSTEMS, P221
  • [3] BUSTGENS B, 1994, P 4 INT C NEW ACT AC, P86
  • [4] FAHRENBERG J, 1994, P 4 INT C NEW ACT AC, P71
  • [5] SILICON-WAFER INTEGRATED ENZYME REACTORS
    LAURELL, T
    DROTT, J
    ROSENGREN, L
    [J]. BIOSENSORS & BIOELECTRONICS, 1995, 10 (3-4) : 289 - 299
  • [6] POROUS SILICON - QUANTUM SPONGE STRUCTURES GROWN VIA A SELF-ADJUSTING ETCHING PROCESS
    LEHMANN, V
    GOSELE, U
    [J]. ADVANCED MATERIALS, 1992, 4 (02) : 114 - 116
  • [7] FORMATION MECHANISM AND PROPERTIES OF ELECTROCHEMICALLY ETCHED TRENCHES IN N-TYPE SILICON
    LEHMANN, V
    FOLL, H
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (02) : 653 - 659
  • [8] POROUS SILICON FORMATION - A QUANTUM WIRE EFFECT
    LEHMANN, V
    GOSELE, U
    [J]. APPLIED PHYSICS LETTERS, 1991, 58 (08) : 856 - 858
  • [9] INTEGRATION OF ENZYME-IMMOBILIZED COLUMN WITH ELECTROCHEMICAL FLOW CELL USING MICROMACHINING TECHNIQUES FOR A GLUCOSE DETECTION SYSTEM
    MURAKAMI, Y
    TAKEUCHI, T
    YOKOYAMA, K
    TAMIYA, E
    KARUBE, I
    SUDA, M
    [J]. ANALYTICAL CHEMISTRY, 1993, 65 (20) : 2731 - 2735
  • [10] MICROSTRUCTURE OF POROUS SILICON
    NAKAJIMA, A
    OHSHIMA, Y
    ITAKURA, T
    GOTO, Y
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (21) : 2631 - 2633