Electrical-stress-induced conductivity increase in SrTiO3 films

被引：30

作者：

Karg, S. ^{[1
]}

Meijer, G. I. ^{[1
]}

Widmer, D. ^{[1
]}

Bednorz, J. G. ^{[1
]}

机构：

[1] IBM Res, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 07期

关键词：

D O I：

10.1063/1.2335802

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The charge transport of polycrystalline SrTiO3 films doped with Cr is investigated by means of temperature- and electric-field-dependent current measurements. In particular, the effect of electrical stress on the conduction mechanism is analyzed to understand the forming process of samples exhibiting resistance-switching phenomena. The temperature dependence of the conductivity can be described with the variable-range hopping model. The electrical-stress-induced conductivity increase of SrTiO3:Cr films is accompanied by a change of the temperature dependence corresponding to a significant increase of the density of localized states. (c) 2006 American Institute of Physics.

引用

页数：3

共 19 条

[1] Variable-range-hopping conduction and dielectric relaxation in disordered Sr0.97(Ti1-xFex)O3-δ [J].

Ang, C ;

Jurado, JR ;

Yu, Z ;

Colomer, MT ;

Frade, JR ;

Baptista, JL .

PHYSICAL REVIEW B, 1998, 57 (19) :11858-11861

[2] Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses [J].

Baek, IG ;

Lee, MS ;

Seo, S ;

Lee, MJ ;

Seo, DH ;

Suh, DS ;

Park, JC ;

Park, SO ;

Kim, HS ;

Yoo, IK ;

Chung, UI ;

Moon, JT .

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :587-590

[3] Field-driven hysteretic and reversible resistive switch at the Ag-Pr0.7Ca0.3MnO3 interface [J].

Baikalov, A ;

Wang, YQ ;

Shen, B ;

Lorenz, B ;

Tsui, S ;

Sun, YY ;

Xue, YY ;

Chu, CW .

APPLIED PHYSICS LETTERS, 2003, 83 (05) :957-959

[4] Reproducible switching effect in thin oxide films for memory applications [J].

Beck, A ;

Bednorz, JG ;

Gerber, C ;

Rossel, C ;

Widmer, D .

APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141

[5] OBSERVATION OF A MIDINFRARED BAND IN SRTIO3-Y [J].

CALVANI, P ;

CAPIZZI, M ;

DONATO, F ;

LUPI, S ;

MASELLI, P ;

PESCHIAROLI, D .

PHYSICAL REVIEW B, 1993, 47 (14) :8917-8922

[6] Resistive switching in metal-ferroelectric-metal junctions [J].

Contreras, JR ;

Kohlstedt, H ;

Poppe, U ;

Waser, R ;

Buchal, C ;

Pertsev, NA .

APPLIED PHYSICS LETTERS, 2003, 83 (22) :4595-4597

[7] Anode hole injection and trapping in silicon dioxide [J].

DiMaria, DJ ;

Cartier, E ;

Buchanan, DA .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (01) :304-317

[8] High dielectric constant and tunability of epitaxial SrTiO3 thin film capacitors [J].

Fuchs, D ;

Schneider, CW ;

Schneider, R ;

Rietschel, H .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (10) :7362-7369

[9] Electric-pulse-induced reversible resistance change effect in magnetoresistive films [J].

Liu, SQ ;

Wu, NJ ;

Ignatiev, A .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2749-2751

[10] Valence states of Cr and the insulator-to-metal transition in Cr-doped SrTiO3 -: art. no. 155102 [J].

Meijer, GI ;

Staub, U ;

Janousch, M ;

Johnson, SL ;

Delley, B ;

Neisius, T .

PHYSICAL REVIEW B, 2005, 72 (15)

← 1 2 →