Auger depth profile analysis and photoluminescence investigations of Zn1-xMgxSe alloys

被引：11

作者：

Bukaluk, A

Trzcinski, A

Firszt, F

Legowski, S

Meczynska, H

机构：

[1] Akad Techniczno Rolnicza, Inst Matemat & Fizykyi, PL-85796 Bydgoszcz, Poland

[2] Uniwersytet Mikolaja Kopernika, Inst Fizyki, PL-87100 Torun, Poland

来源：

SURFACE SCIENCE | 2002年 / 507卷

关键词：

alloys; semiconducting surfaces; chalcogens; photoluminescence; Auger electron spectroscopy;

D O I：

10.1016/S0039-6028(02)01208-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Zn1-xMgxSe crystals grown by the high-pressure Bridgman method for 0 < x < 0.38 were investigated. Composition of the samples was determined by electron microprobe analysis. Photoluminescence (PL) spectra were measured in the temperature range from 40 K tip to room temperature. It was found that PL spectra measured at 40 K. consist of the exciton, edge and deep level emission bands. The broadening of PL bands due to compositional and structural disorder was observed. Auger electron spectroscopy (AES) together with argon ion Sputtering Was used to determine sub-surface composition of Zn1-xMgxSe crystals. AES depth profiles, obtained by ion milling, of the samples and consecutive Auger analysis, allowed to obtain distribution of Zn, Mg and Se near the crystal surface. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

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页码：175 / 180

页数：6

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