Anisotropic magnetoresistance and anisotropic tunneling magnetoresistance due to quantum interference in ferromagnetic metal break junctions

被引：57

作者：

Bolotin, Kirill I. ^{[1
]}

Kuemmeth, Ferdinand ^{[1
]}

Ralph, D. C. ^{[1
]}

机构：

[1] Cornell Univ, Atom & Solid State Phys Lab, Ithaca, NY 14853 USA

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 97卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.97.127202

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference.

引用

页数：4

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