Artifacts that mimic ballistic magnetoresistance

被引：13

作者：

Egelhoff, WF ^{[1
]}

Gan, L

Ettedgui, H

Kadmon, Y

Powell, CJ

Chen, PJ

Shapiro, AJ

McMichael, RD

Mallett, JJ

Moffat, TP

Stiles, MD

Svedberg, EB

机构：

[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

[2] Seagate Technol, Pittsburgh, PA 15222 USA

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2005年 / 287卷

关键词：

ballistic magnetoresistance; artifacts; nanocontacts;

D O I：

10.1016/j.jmmm.2004.10.082

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the circumstances underlying recent reports of very large values of ballistic magneto rest stance (BMR) in nanocontacts between magnetic wires. We find that the geometries used are subject to artifacts due to motion of the wires that distort the nanocontact thereby changing its electrical resistance. Since these nanocontacts are often of atomic scale, reliable experiments would require stability on the atomic scale. No method for achieving such stability in macroscopic wires is apparent. We conclude that macroscopic magnetic wires cannot be used to establish the validity of the BMR effect. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：496 / 500

页数：5

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