Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots

被引：20

作者：

Lee, HS

Lee, JY

Kim, TW

Choo, DC

Kim, MD

Seo, SY

Shin, JH

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Yuseong Ku, Taejon 305701, South Korea

[2] Kwangwoon Univ, Dept Phys, Nowoon Ku, Seoul 139701, South Korea

[3] Samsung Elect, Div Optoelect, Suwon 442742, South Korea

[4] Korea Adv Inst Sci & Technol, Dept Phys, Yuseong Ku, Taejon 305701, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 241卷 / 1-2期

关键词：

characterization; molecular beam epitaxy; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(02)01252-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Atomic force microscope (AFM), transmission electron microscopy (TEM), and photoluminescence measurements were carried out to investigate the dependence of the InAs quantum dot size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots (QDs) grown on (0 0 1) GaAs substrates. AFM and TEM images showed that the size of the QDs increased with increase in the stacked layer number up to the deposition time of 20 s. However, the size distribution uniformity of the QDs was improved with increase in the stacked layer number when the deposition time and the stacking layer of the InAs QDs gradually decreased. These results can help in an improved understanding of the control of sizes of QDs in InAs/GaAs QD arrays. (C) 2002 Elsevier Science B.V. All rights reserved.

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收藏

页码：63 / 68

页数：6

相关论文

共 18 条

[1] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946

[2] Stacking number dependence of size distribution of vertically stacked InAs GaAs quantum dots [J].

Furukawa, Y ;

Noda, S ;

Ishii, M ;

Wakahara, A ;

Sasaki, A .

JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (05) :452-456

[3] ULTRANARROW LUMINESCENCE LINES FROM SINGLE QUANTUM DOTS [J].

GRUNDMANN, M ;

CHRISTEN, J ;

LEDENTSOV, NN ;

BOHRER, J ;

BIMBERG, D ;

RUVIMOV, SS ;

WERNER, P ;

RICHTER, U ;

GOSELE, U ;

HEYDENREICH, J ;

USTINOV, VM ;

EGOROV, AY ;

ZHUKOV, AE ;

KOPEV, PS ;

ALFEROV, ZI .

PHYSICAL REVIEW LETTERS, 1995, 74 (20) :4043-4046

[4] Observation of reentrant 2D to 3D morphology transition in highly strained epitaxy: InAs on GaAs [J].

Heitz, R ;

Ramachandran, TR ;

Kalburge, A ;

Xie, Q ;

Mukhametzhanov, I ;

Chen, P ;

Madhukar, A .

PHYSICAL REVIEW LETTERS, 1997, 78 (21) :4071-4074

[5] Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers [J].

Kamath, K ;

Bhattacharya, P ;

Sosnowski, T ;

Norris, T ;

Phillips, J .

ELECTRONICS LETTERS, 1996, 32 (15) :1374-1375

[6] Microstructural and interband transition properties of vertically stacked InAs/GaAs self-assembled quantum dots embedded in modulation-doped heterostructures [J].

Kim, TW ;

Lee, DU ;

Choo, DC ;

Kim, HJ ;

Lee, HS ;

Lee, JY ;

Kim, MD .

APPLIED PHYSICS LETTERS, 2001, 79 (01) :33-35

[7] Quantum dot heterostructures: fabrication, properties, lasers (Review) [J].

Ledentsov, NN ;

Ustinov, VM ;

Shchukin, VA ;

Kop'ev, PS ;

Alferov, ZI ;

Bimberg, D .

SEMICONDUCTORS, 1998, 32 (04) :343-365

[8] Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures [J].

Lee, SW ;

Hirakawa, K ;

Shimada, Y .

APPLIED PHYSICS LETTERS, 1999, 75 (10) :1428-1430

[9] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[10] Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dots [J].

Liao, XZ ;

Zou, J ;

Duan, XF ;

Cockayne, DJH ;

Leon, R ;

Lobo, C .

PHYSICAL REVIEW B, 1998, 58 (08) :R4235-R4237