Highly anisotropic dispersion of surface acoustic waves in M-plane GaN layers grown on γ-LiAlO2(100) -: art. no. 115317

被引：10

作者：

Takagaki, Y ^{[1
]}

Hucho, C ^{[1
]}

Wiebicke, E ^{[1
]}

Sun, YJ ^{[1
]}

Brandt, O ^{[1
]}

Ramsteiner, M ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.69.115317

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The characteristics of surface acoustic waves (SAW's) in M-plane GaN and AlN layers grown on gamma-LiAlO2(100) are investigated. The SAW velocities in the (100) plane of bulk gamma-LiAlO2 are virtually identical along the [010] and [001] directions and are significantly larger than those in the M-plane bulk GaN. Despite these velocity relations, the SAW velocity in GaN/gamma-LiAlO2 heterostructures increases steadily along the GaN[11 (2) over bar0] direction with increasing the SAW wavelength, whereas it decreases along the GaN [0001] direction. A guided Rayleigh mode is observed solely for the propagation along the GaN[11 (2) over bar0] direction. These experimental results are compared with numerical simulations. Velocity bowing is indicated to govern the dispersion in the heterostructures.

引用

页数：6

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