Amorphous silicon thin-film transistors with field-effect mobilities of 2 cm2/V s for electrons and 0.1 cm2/V s for holes

被引：43

作者：

Han, Lin ^{[1
]}

Mandlik, Prashant

Cherenack, Kunigunde H.

Wagner, Sigurd

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 16期

关键词：

amorphous semiconductors; dielectric thin films; elemental semiconductors; hydrogenation; plasma CVD; semiconductor thin films; silicon; silicon compounds; thin film transistors; DEPOSITION;

D O I：

10.1063/1.3119636

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new gate dielectric material is used to fabricate hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) with high field-effect mobilities. The dielectric is a homogeneous SiO2-silicone hybrid, which is deposited by plasma-enhanced chemical vapor deposition system at nominal room temperature. This new dielectric results in a-Si:H TFTs with measured field-effect mobilities of similar to 2 cm(2)/V s for electrons and similar to 0.1 cm(2)/V s for holes.

引用

页数：3

共 15 条

[1]

CHENG IC, 2004, THESIS PRINCETON U

[2] Hole drift-mobility measurements in contemporary amorphous silicon [J].

Dinca, S ;

Ganguly, G ;

Lu, Z ;

Schiff, EA ;

Vlahos, V ;

Wronski, CR ;

Yuan, Q .

AMORPHOUS AND NANOCRYSTALLINE SILICON-BASED FILMS-2003, 2003, 762 :345-350

[3]

HAN L, IEEE ELECT IN PRESS

[4] Properties of a Permeation Barrier Material Deposited from Hexamethyl Disiloxane and Oxygen [J].

Han, Lin ;

Mandlik, Prashant ;

Gartside, Jonathan ;

Wagner, Sigurd ;

Silvernail, Jeff A. ;

Ma, Rui-Qing ;

Hack, Michael ;

Brown, Julie J. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (02) :H106-H114

[5]

Hekmatshoar B, 2008, INT EL DEVICES MEET, P89

[6] Highly stable amorphous-silicon thin-film transistors on clear plastic [J].

Hekmatshoar, Bahman ;

Cherenack, Kunigunde H. ;

Kattamis, Alex Z. ;

Long, Ke ;

Wagner, Sigurd ;

Sturm, James C. .

APPLIED PHYSICS LETTERS, 2008, 93 (03)

[7]

Kanicki J, 2003, THIN-FILM TRANSISTORS, P71

[8] Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability [J].

Kattamis, Alex Z. ;

Cherenack, Kunigunde H. ;

Hekmatshoar, Bahman ;

Cheng, I-Chun ;

Gleskova, Helena ;

Stunn, James C. ;

Wagner, Sigurd .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (07) :606-608

[9] Evolutionary phase diagrams for plasma-enhanced chemical vapor deposition of silicon thin films from hydrogen-diluted silane [J].

Koh, J ;

Ferlauto, AS ;

Rovira, PI ;

Wronski, CR ;

Collins, RW .

APPLIED PHYSICS LETTERS, 1999, 75 (15) :2286-2288

[10] Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250 °C to 280 °C [J].

Long, K ;

Kattamis, AZ ;

Cheng, IC ;

Gleskova, H ;

Wagner, S ;

Sturm, JC .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (02) :111-113

← 1 2 →