Highly stable amorphous-silicon thin-film transistors on clear plastic

被引：60

作者：

Hekmatshoar, Bahman ^{[1
]}

Cherenack, Kunigunde H.

Kattamis, Alex Z.

Long, Ke

Wagner, Sigurd

Sturm, James C.

机构：

[1] Princeton Univ, Princeton Inst Sci & Technol Mat, Princeton, NJ 08544 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 03期

关键词：

D O I：

10.1063/1.2963481

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) have been fabricated on clear plastic with highly stable threshold voltages. When operated at a gate field of 2.5x10(5) V/cm, the threshold voltage shift extrapolated to only similar to 1.2 V after ten years. This stability is achieved by a high deposition temperature for the gate silicon nitride insulator which reduces charge trapping and high hydrogen dilution during a-Si:H growth to reduce defect creation in a-Si:H. This gate field of 2.5x10(5) V/cm is sufficient to drive phosphorescent organic light emitting diodes (OLEDs) at a brightness of 1000 Cd/m(2). The half-life of the TFT current is over ten years, slightly longer than the luminescence half-life of high quality green OLEDs.

引用

页数：3

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