Quantitative analysis of nanoscale switching in SrBi2Ta2O9 thin films by piezoresponse force microscopy

被引：54

作者：

Kalinin, SV ^{[1
]}

Gruverman, A

Bonnell, DA

机构：

[1] Oak Ridge Natl Lab, Condensed Matter Sci Div, Oak Ridge, TN 37831 USA

[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[3] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1775881

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Local switching properties in SrBi2Ta2O9 thin films have been studied by spatially resolved piezoresponse force microscopy (PFM) and spectroscopy. Variations in PFM contrast of individual grains due to their random crystallographic orientation are consistent with the grain switching behavior examined via vertical and lateral hysteresis loops. Theoretical description of vertical hysteresis loop shape obtained in the point-charge approximation is shown to be in good agreement with the experimental data. Dependence of the hysteresis loop parameters on the grain crystallographic orientation is analyzed. It has been found that grain deviation from the ideal (010) orientation when the polar axis is normal to the film plane results in the decrease of the PFM signal and increase of the coercive voltage in agreement with theoretical predictions. (C) 2004 American Institute of Physics.

引用

页码：795 / 797

页数：3

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