Electrical properties of sulfur-passivated III-V compound devices

被引:18
作者
Eftekhari, G [1 ]
机构
[1] SUNY Albany, Dept Elect & Comp Engn, New Paltz, NY 12561 USA
关键词
passivation; III-V semiconductor surfaces; sulfidation; electrical properties;
D O I
10.1016/S0042-207X(02)00195-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The results of numerous studies since 1987 show that sulfur passivation improves the electrical parameters of III-V compound devices. In this article, we examine the electrical parameters of metal-semiconductor contacts (MS), MS contacts with thin interfacial layer (MIS), and metal-oxide-semiconductor structures (MOS). (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:81 / 90
页数:10
相关论文
共 57 条
[41]   STRUCTURE OF S ON A PASSIVATED GAP(100) SURFACE [J].
LU, ZH ;
GRAHAM, MJ .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (11) :7567-7569
[42]   EFFECTS OF H2S ADSORPTION ON SURFACE-PROPERTIES OF GAAS (100) GROWN INSITU BY MBE [J].
MASSIES, J ;
DEZALY, F ;
LINH, NT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1134-1140
[43]   MONO-CRYSTALLINE ALUMINUM OHMIC CONTACT TO N-GAAS BY H2S ADSORPTION [J].
MASSIES, J ;
CHAPLART, J ;
LAVIRON, M ;
LINH, NT .
APPLIED PHYSICS LETTERS, 1981, 38 (09) :693-695
[44]   STUDY OF NOVEL CHEMICAL SURFACE PASSIVATION TECHNIQUES ON GAAS PN JUNCTION SOLAR-CELLS [J].
MAUK, MG ;
XU, S ;
ARENT, DJ ;
MERTENS, RP ;
BORGHS, G .
APPLIED PHYSICS LETTERS, 1989, 54 (03) :213-215
[45]   THERMODYNAMIC STABILITY OF GAAS SULFUR PASSIVATION [J].
MEDVEDEV, YV .
APPLIED PHYSICS LETTERS, 1994, 64 (25) :3458-3460
[46]  
MONTGOMERY V, 1980, J PHYS C SOLID STATE, V14, pL191
[47]   UNIVERSAL PASSIVATION EFFECT OF (NH4)2SX TREATMENT ON THE SURFACE OF III-V COMPOUND SEMICONDUCTORS [J].
OIGAWA, H ;
FAN, JF ;
NANNICHI, Y ;
SUGAHARA, H ;
OSHIMA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (3A) :L322-L325
[48]   Sulfur passivation of InP InGaAs metal-semiconductor-metal photodetectors [J].
Pang, Z ;
Song, KC ;
Mascher, P ;
Simmons, JG .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (05) :1946-1951
[49]   DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION [J].
SANDROFF, CJ ;
NOTTENBURG, RN ;
BISCHOFF, JC ;
BHAT, R .
APPLIED PHYSICS LETTERS, 1987, 51 (01) :33-35
[50]   SYNCHROTRON RADIATION PHOTOEMISSION ANALYSIS FOR (NH4)2SX-TREATED GAAS [J].
SUGAHARA, H ;
OSHIMA, M ;
OIGAWA, H ;
SHIGEKAWA, H ;
NANNICHI, Y .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (08) :4349-4353