Improved performance of the single-layer and double-layer organic light emitting diodes by nickel oxide coated indium tin oxide anode

被引：107

作者：

Chan, IM ^{[1
]}

Hong, FC ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 701, Taiwan

来源：

THIN SOLID FILMS | 2004年 / 450卷 / 02期

关键词：

optoelectronic devices; nickel oxide; indium tin oxide; work function;

D O I：

10.1016/j.tsf.2003.10.022

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical and optical properties of the NiO films deposited under various conditions were first characterized. An ultra-thin layer of nickel oxide (NiO) was then deposited on the indium-tin oxide (ITO) anode to enhance the hole injection in the organic light-emitting diode (OLED) devices. A very low turn-on voltage (3 V) was actually observed for the device with the ITO/NiO anode in the conventional double layer heterojunction OLEDs. The enhancement of hole injection by the ITO/NiO anode was further verified by the hole-only device and by the device with a patterned NiO layer on the ITO anode. The luminance and the current density of the single-layer OLED device were also significantly improved by using the ITO/NiO anode to enhance the hole injection. Although the luminescence efficiency was low, the reasons of low efficiency were studied and the improvement method was proposed. Our results suggest that the NiO/ITO anode is an excellent choice to enhance the hole injection in OLED devices. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：304 / 311

页数：8

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