Driving force of stacking-fault formation in SiC p-i-n diodes -: art. no. 175504

被引：72

作者：

Ha, S

Skowronski, M

Sumakeris, JJ

Paisley, MJ

Das, MK

机构：

[1] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA

[2] Cree Inc, Durham, NC 27703 USA

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 92卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.92.175504

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The driving force of stacking-fault expansion in SiC p-i-n diodes was investigated using optical emission microscopy and transmission electron microscopy. The stacking-fault expansion and properties of the partial dislocations were inconsistent with any stress as the driving force. A thermodynamic free energy difference between the perfect and a faulted structure is suggested as a plausible driving force in the tested diodes, indicating that hexagonal polytypes of silicon carbide are metastable at room temperature.

引用

页码：175504 / 1

页数：4

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