Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias

被引：176

作者：

Galeckas, A ^{[1
]}

Linnros, J ^{[1
]}

Pirouz, P ^{[1
]}

机构：

[1] Royal Inst Technol, Dept Elect, SE-16440 Stockholm, Sweden

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 05期

关键词：

D O I：

10.1063/1.1496498

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The extension of stacking faults in a forward-biased 4H-SiC PiN diodes by the recombination-enhanced motion of leading partial dislocations has been investigated by the technique of optical emission microscopy. From the temperature dependence of the measured velocity of the partials, an activation energy of 0.27 eV is obtained. Based on this and analysis of the emission spectra, a radiative recombination level of 2.8 eV for the stacking fault, and two energy levels for the partial dislocation, a radiative one at 1.8 eV and a nonradiative at 2.2 eV, have been determined. (C) 2002 American Institute of Physics.

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页码：883 / 885

页数：3

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