Dynamics and energetics of Si ad-dimers and ad-dimer clusters on Ge(100)

被引:34
作者
Wulfhekel, W
Hattink, BJ
Zandvliet, HJW
Rosenfeld, G
Poelsema, B
机构
[1] UNIV TWENTE,CTR MAT RES,NL-7500 AE ENSCHEDE,NETHERLANDS
[2] FORSCHUNGSZENTRUM,INST GRENZFLACHENFORSCH & VAKUUMPHYS,D-52425 JULICH,GERMANY
[3] UNIV BONN,INST PHYS & THEORET CHEM,D-53115 BONN,GERMANY
关键词
D O I
10.1103/PhysRevLett.79.2494
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The early stages of silicon heteroepitaxial growth on Ge(100) have been studied with scanning tunneling microscopy. Four different Si ad-dimer configurations as well as metastable strings of ad-dimers on Ge(100) have been experimentally identified using dual bias imaging. The metastable strings are aligned along [130] directions and play an important role in binding of Si atoms and nucleation of Si islands. Various dynamic events, such as the collapse of metastable strings into islands and diffusion events of ad-dimers both along and across substrate dimer rows, have been observed.
引用
收藏
页码:2494 / 2497
页数:4
相关论文
共 17 条
[1]   SI BINDING AND NUCLEATION ON SI(100) [J].
BEDROSSIAN, PJ .
PHYSICAL REVIEW LETTERS, 1995, 74 (18) :3648-3651
[2]   Diffusion of the silicon dimer on Si(001): New possibilities at 450 K [J].
Borovsky, B ;
Krueger, M ;
Ganz, E .
PHYSICAL REVIEW LETTERS, 1997, 78 (22) :4229-4232
[3]   THE ENERGETICS OF ADATOMS ON THE SI(100) SURFACE [J].
BROCKS, G ;
KELLY, PJ ;
CAR, R .
SURFACE SCIENCE, 1992, 269 :860-866
[4]   EPITAXIAL-GROWTH OF SILICON ON SI(001) BY SCANNING TUNNELING MICROSCOPY [J].
HAMERS, RJ ;
KOHLER, UK ;
DEMUTH, JE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01) :195-200
[5]   SCANNING-TUNNELING-MICROSCOPY STUDY OF SINGLE-DOMAIN SI(001) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].
HOEVEN, AJ ;
LENSSINCK, JM ;
DIJKKAMP, D ;
VANLOENEN, EJ ;
DIELEMAN, J .
PHYSICAL REVIEW LETTERS, 1989, 63 (17) :1830-1832
[6]   TUNNELING MICROSCOPY OF GE(001) [J].
KUBBY, JA ;
GRIFFITH, JE ;
BECKER, RS ;
VICKERS, JS .
PHYSICAL REVIEW B, 1987, 36 (11) :6079-6093
[7]   AN ATOMIC-LEVEL VIEW OF KINETIC AND THERMODYNAMIC INFLUENCES IN THE GROWTH OF THIN-FILMS [J].
LAGALLY, MG .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (3B) :1493-1501
[8]   ANISOTROPY IN SURFACE MIGRATION OF SI AND GE ON SI(001) [J].
MO, YW ;
LAGALLY, MG .
SURFACE SCIENCE, 1991, 248 (03) :313-320
[9]  
MO YW, 1990, PHYS REV LETT, V65, P1020, DOI 10.1142/S0217984990001732
[10]   ACTIVATION-ENERGY FOR SURFACE-DIFFUSION OF SI ON SI(001) - A SCANNING-TUNNELING-MICROSCOPY STUDY [J].
MO, YW ;
KLEINER, J ;
WEBB, MB ;
LAGALLY, MG .
PHYSICAL REVIEW LETTERS, 1991, 66 (15) :1998-2001