Integrated AlGaInAs-silicon evanescent racetrack laser and photodetector

被引:162
作者
Fang, Alexander W. [1 ]
Jones, Richard
Park, Hyundai
Cohen, Oded
Raday, Omri
Paniccia, Mario J.
Bowers, John E.
机构
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Intel Corp, Santa Clara, CA 95054 USA
[3] Intel Corp, IL-91031 Jerusalem, Israel
来源
OPTICS EXPRESS | 2007年 / 15卷 / 05期
关键词
D O I
10.1364/OE.15.002315
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Here we report a racetrack resonator laser integrated with two photo-detectors on the hybrid AlGaInAs-silicon evanescent device platform. Unlike previous demonstrations of hybrid AlGaInAs-silicon evanescent lasers, we demonstrate an on-chip racetrack resonator laser that does not rely on facet polishing and dicing in order to define the laser cavity. The laser runs continuous-wave (c.w.) at 1590 nm with a threshold of 175 mA, has a maximum total output power of 29 mW and a maximum operating temperature of 60 C. The output of this laser light is directly coupled into a pair of on chip hybrid AlGaInAs-silicon evanescent photodetectors used to measure the laser output. (c) 2007 Optical Society of America.
引用
收藏
页码:2315 / 2322
页数:8
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