Second harmonic generation at the GaAs(111)-B|solution interface

被引:7
作者
Lazarescu, V
Lazarescu, MF
Jones, H
Schmickler, W
机构
[1] Romanian Acad Sci, Inst Phys Chem, Bucharest 060041, Romania
[2] Natl Inst Mat Phys, Bucharest 77125, Romania
[3] Univ Ulm, Laser Applicat Dept, D-89069 Ulm, Germany
[4] Univ Ulm, Electrochem Dept, D-89069 Ulm, Germany
关键词
gallium arsenide; second harmonic generation; impedence spectroscopy; surface states;
D O I
10.1016/j.jelechem.2003.12.035
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Second harmonic generation from the interface between GaAs(111)-B and an aqueous electrolyte has been investigated at a long wavelength (1064 nm) and at two shorter ones (865 and 815 nm). The signal showed the symmetry of the crystal; the isotropic amplitude was found to vary substantially with the electrode potential, indicating that a major part of the signal is generated near the interface. The potential dependence was stronger at shorter wavelengths. Impedance spectroscopy revealed the existence of surface states, which may affect the magnitude of the signal. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:257 / 261
页数:5
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