Improved Open- Circuit Voltage in ZnO-PbSe Quantum Dot Solar Cells by Understanding and Reducing Losses Arising from the ZnO Conduction Band Tail

被引:81
作者
Hoye, Robert L. Z. [1 ]
Ehrler, Bruno [2 ]
Boehm, Marcus L. [2 ]
Munoz-Rojas, David [1 ,3 ]
Altamimi, Rashid M. [4 ]
Alyamani, Ahmed Y. [5 ]
Vaynzof, Yana [2 ]
Sadhanala, Aditya [2 ]
Ercolano, Giorgio [1 ]
Greenham, Neil C. [2 ]
Friend, Richard H. [2 ]
MacManus-Driscoll, Judith L. [1 ]
Musselman, Kevin P. [1 ,2 ]
机构
[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB3 0FS, England
[2] Univ Cambridge, Dept Phys, Cambridge CB3 0HE, England
[3] ICMAB CSIC, Inst Ciencia Mat Barcelona, Bellaterra 08193, Spain
[4] King Abdulaziz City Sci & Technol, Petrochem Res Inst, Riyadh 11442, Saudi Arabia
[5] King Abdulaziz City Sci & Technol, Natl Nanotechnol Res Ctr, Riyadh 11442, Saudi Arabia
基金
英国工程与自然科学研究理事会;
关键词
PERFORMANCE; EFFICIENCY; DEVICES; LAYER; GAP;
D O I
10.1002/aenm.201301544
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Colloidal quantum dot solar cells (CQDSCs) are attracting growing attention owing to significant improvements in efficiency. However, even the best depleted-heterojunction CQDSCs currently display open-circuit voltages (V(OC)s) at least 0.5 V below the voltage corresponding to the bandgap. We find that the tail of states in the conduction band of the metal oxide layer can limit the achievable device efficiency. By continuously tuning the zinc oxide conduction band position via magnesium doping, we probe this critical loss pathway in ZnO-PbSe CQDSCs and optimize the energetic position of the tail of states, thereby increasing both the V-OC (from 408 mV to 608 mV) and the device efficiency.
引用
收藏
页数:6
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