Photoluminescence and probe effect of Er-doped nanometer-sized Si materials

被引：12

作者：

Zhao, XW ^{[1
]}

Komuro, S ^{[1
]}

Isshiki, H ^{[1
]}

Maruyama, S ^{[1
]}

Aoyagi, Y ^{[1
]}

Sugano, T ^{[1
]}

机构：

[1] TOYO UNIV, FAC ENGN, KAWAGOE, SAITAMA 350, JAPAN

来源：

APPLIED SURFACE SCIENCE | 1997年 / 113卷

关键词：

erbium; photoluminescence; probe; porous silicon; nanometer-sized silicon;

D O I：

10.1016/S0169-4332(96)00896-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Er was doped into porous Si and nanocrystalline Si thin films. Sharp and intense photoluminescence at 1.54 mu m was observed up to room temperature. We demonstrate that Er3+ ions are excited by an energy transfer process from the excited electron-hole pairs in the host materials and no direct excitation of Er3+ ions can be observed. This fact suggests that the Er emission could be used as a probe to determine absorption edges of:he hosts. This idea was first applied to Er-doped porous Si. Identical excitation edges of the 1.54 mu m emission and the visible emission from porous Si have been demonstrated, We suggest that the method should also be valid for measuring the absorption edge of a nanometer-sized Si host material even if it is not luminescent.

引用

页码：121 / 125

页数：5

共 11 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].