Ballistic transport in induced one-dimensional hole systems

被引：53

作者：

Klochan, O. ^{[1
]}

Clarke, W. R.

Danneau, R.

Micolich, A. P.

Ho, L. H.

Hamilton, A. R.

Muraki, K.

Hirayama, Y.

机构：

[1] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia

[2] NTT Corp, NTT Basic Res Lab, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 09期

基金：

澳大利亚研究理事会;

关键词：

D O I：

10.1063/1.2337525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors have fabricated and studied a ballistic one-dimensional p-type quantum wire using an undoped AlGaAs/GaAs heterostructure. The absence of modulation doping eliminates remote ionized impurity scattering and allows high mobilities to be achieved over a wide range of hole densities and, in particular, at very low densities where carrier-carrier interactions are strongest. The device exhibits clear quantized conductance plateaus with highly stable gate characteristics. These devices provide opportunities for studying spin-orbit coupling and interaction effects in mesoscopic hole systems in the strong interaction regime where r(s)>10. (c) 2006 American Institute of Physics.

引用

页数：3

共 19 条

[1] Colloquium:: Metallic behavior and related phenomena in two dimensions [J].

Abrahams, E ;

Kravchenko, SV ;

Sarachik, MP .

REVIEWS OF MODERN PHYSICS, 2001, 73 (02) :251-266

[2] Fabrication of induced two-dimensional hole systems on (311)A GaAs [J].

Clarke, WR ;

Micolich, AP ;

Hamilton, AR ;

Simmons, MY ;

Muraki, K ;

Hirayama, Y .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (02)

[3]

DANESHVAR AJ, 1997, PHYS REV B, V55, pR1340

[4] Conductance quantization and the 0.7x2e2/h conductance anomaly in one-dimensional hole systems -: art. no. 012107 [J].

Danneau, R ;

Clarke, WR ;

Klochan, O ;

Micolich, AP ;

Hamilton, AR ;

Simmons, MY ;

Pepper, M ;

Ritchie, DA .

APPLIED PHYSICS LETTERS, 2006, 88 (01)

[5]

Grbic B, 2005, APPL PHYS LETT, V87, DOI [10.1063/1.2139994, 10.1063/1.213994]

[6] Fabrication of high-quality one- and two-dimensional electron gases in undoped GaAs/AlGaAs heterostructures [J].

Harrell, RH ;

Pyshkin, KS ;

Simmons, MY ;

Ritchie, DA ;

Ford, CJB ;

Jones, GAC ;

Pepper, M .

APPLIED PHYSICS LETTERS, 1999, 74 (16) :2328-2330

[7] Formation of two-dimensional electron and hole gases in undoped AlxGa1-xAs/GaAs heterostructures [J].

Hirayama, Y .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (01) :588-590

[8] Quantized conductance in quantum wires with gate-controlled width and electron density [J].

Kane, BE ;

Facer, GR ;

Dzurak, AS ;

Lumpkin, NE ;

Clark, RG ;

Pfeiffer, LN ;

West, KW .

APPLIED PHYSICS LETTERS, 1998, 72 (26) :3506-3508

[9] VARIABLE-DENSITY HIGH-MOBILITY 2-DIMENSIONAL ELECTRON AND HOLE GASES IN A GATED GAAS/ALXGA1-XAS HETEROSTRUCTURE [J].

KANE, BE ;

PFEIFFER, LN ;

WEST, KW ;

HARNETT, CK .

APPLIED PHYSICS LETTERS, 1993, 63 (15) :2132-2134

[10] BREAKDOWN OF QUANTIZED CONDUCTANCE IN POINT CONTACTS CALCULATED USING REALISTIC POTENTIALS [J].

NIXON, JA ;

DAVIES, JH ;

BARANGER, HU .

PHYSICAL REVIEW B, 1991, 43 (15) :12638-12641

← 1 2 →