Novel fabrication of UV photodetector based on ZnO nanowire/p-GaN heterojunction

被引：86

作者：

Chen, Chih-Han ^{[2
,3
]}

Chang, Shoou-Jinn ^{[4
,5
]}

Chang, Sheng-Po ^{[2
,3
]}

Li, Meng-Ju ^{[6
]}

Chen, I-Cherng ^{[7
]}

Hsueh, Ting-Jen ^{[8
]}

Hsu, Cheng-Liang ^{[1
]}

机构：

[1] Natl Univ Tainan, Dept Elect Engn, Tainan 700, Taiwan

[2] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[3] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

[4] Natl Cheng Kung Univ, Inst Microelect, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[5] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[6] Natl Univ Tainan, Grad Inst Electopt Engn, Tainan 700, Taiwan

[7] Ind Technol Res Inst, Micro Syst Technol Ctr, Tainan 709, Taiwan

[8] Natl Nano Device Labs, Tainan 741, Taiwan

来源：

CHEMICAL PHYSICS LETTERS | 2009年 / 476卷 / 1-3期

关键词：

ULTRAVIOLET; PHOTOLUMINESCENCE; PHOTOCONDUCTIVITY; ARRAYS; FILMS;

D O I：

10.1016/j.cplett.2009.06.007

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Vertical well-aligned zinc oxide (ZnO) nanowires were grown on p-GaN/sapphire to produce a p-n heterojunction using the vapor-liquid-solid (VLS) process. A p-n heterojunction in an ultraviolet photodetector was successfully demonstrated. The length of ZnO nanowires on the p-GaN epilayer was in the range 0.7-1 mu m and the diameter was in the range 80-100 nm. The current-voltage curve of the heterojunction demonstrates obvious rectifying diode behavior in a dark environment. Under UV light (365 nm), the current was almost 15 times that in the dark current at -5 V. Continuous measurements indicate the reproducibility and stability of this heterojunction photodetector. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：69 / 72

页数：4

共 19 条

[1] GaN/AlGaN ultraviolet/infrared dual-band detector [J].

Ariyawansa, G. ;

Rinzan, M. B. M. ;

Alevli, M. ;

Strassburg, M. ;

Dietz, N. ;

Perera, A. G. U. ;

Matsik, S. G. ;

Asghar, A. ;

Ferguson, I. T. ;

Luo, H. ;

Bezinger, A. ;

Liu, H. C. .

APPLIED PHYSICS LETTERS, 2006, 89 (09)

[2] AlGaN ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates [J].

Chang, S. J. ;

Ko, T. K. ;

Sheu, J. K. ;

Shei, S. C. ;

Lai, W. C. ;

Chiou, Y. Z. ;

Lin, Y. C. ;

Chang, C. S. ;

Chen, W. S. ;

Shen, C. F. .

SENSORS AND ACTUATORS A-PHYSICAL, 2007, 135 (02) :502-506

[3] The substrate-induced effect of GaN MSM photodetectors on silicon substrate [J].

Chiou, Y. Z. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (12)

[4] A low cost n-SiCN/p-SiCN homojunction for high temperature and high gain ultraviolet detecting applications [J].

Chou, Tse-Heng ;

Fang, Yean-Kuen ;

Chiang, Yen-Ting ;

Lin, Cheng-I ;

Yang, Che-Yun .

SENSORS AND ACTUATORS A-PHYSICAL, 2008, 147 (01) :60-63

[5] Hydrogenated amorphous silicon ultraviolet sensor for deoxyribonucleic acid analysis -: art. no. 083904 [J].

de Cesare, G ;

Caputo, D ;

Nascetti, A ;

Guiducci, C ;

Riccò, B .

APPLIED PHYSICS LETTERS, 2006, 88 (08)

[6] Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction [J].

Guo, Zhen ;

Zhao, Dongxu ;

Liu, Yichun ;

Shen, Dezhen ;

Zhang, Jiying ;

Li, Binghui .

APPLIED PHYSICS LETTERS, 2008, 93 (16)

[7] Photoconduction studies on GaN nanowire transistors under UV and polarized UV illumination [J].

Han, S ;

Jin, W ;

Zhang, DH ;

Tang, T ;

Li, C ;

Liu, XL ;

Liu, ZQ ;

Lei, B ;

Zhou, CW .

CHEMICAL PHYSICS LETTERS, 2004, 389 (1-3) :176-180

[8]

HAU H, 2007, CHEM PHYS LETT, V435, P119

[9] Inverted photovoltaic device based on ZnO and organic small molecule heterojunction [J].

Liu, J. P. ;

Wang, S. S. ;

Bian, Z. Q. ;

Shan, M. N. ;

Huang, C. H. .

CHEMICAL PHYSICS LETTERS, 2009, 470 (1-3) :103-106

[10] Fabrication and characterization of ZnO nanowires based UV photodiodes [J].

Luo, L ;

Zhang, YF ;

Mao, SS ;

Lin, LW .

SENSORS AND ACTUATORS A-PHYSICAL, 2006, 127 (02) :201-206

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