AlGaN ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates

被引：16

作者：

Chang, S. J. ^{[1
]}

Ko, T. K.

Sheu, J. K.

Shei, S. C.

Lai, W. C.

Chiou, Y. Z.

Lin, Y. C.

Chang, C. S.

Chen, W. S.

Shen, C. F.

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 70101, Taiwan

[4] Natl Univ Tainan, Dept Elect Engn, Tainan 700, Taiwan

[5] So Taiwan Univ Technol, Dept Elect Engn, Tainan 710, Taiwan

[6] Epitech Technol Corp, Hsin Shi 744, Taiwan

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2007年 / 135卷 / 02期

关键词：

AlGaN; MSM; photodetectors; Si substrates; UV;

D O I：

10.1016/j.sna.2006.09.017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN ultraviolet metal-semiconductor-metal photodetectors (PDs) with low temperature (LT)-AlN and LT-GaN cap layers were prepared on Si substrates. Unlike PDs prepared on sapphire substrates, no markedly reduction in dark current was observed from the PD with LT-GaN cap layer. With an incident wavelength of 305 nm and an applied bias of 5 V, it was found that peak responsivities were 0.02, 0.005 and 0.007 A/W for the PDs with LT-AlN cap layer, with LT-GaN cap layer and without cap layer, respectively. The corresponding detectivities were 2.2 x 10(10), 1.36 x 10(10) and 1.55 x 10(10) cm Hz(0.5) W-1, respectively. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：502 / 506

页数：5

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