A low cost n-SiCN/p-SiCN homojunction for high temperature and high gain ultraviolet detecting applications

被引：22

作者：

Chou, Tse-Heng ^{[1
]}

Fang, Yean-Kuen ^{[1
]}

Chiang, Yen-Ting ^{[1
]}

Lin, Cheng-I ^{[1
]}

Yang, Che-Yun ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, VLSI Technol Lab, Tainan 701, Taiwan

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2008年 / 147卷 / 01期

关键词：

homojunction; detector; UV; SiCN; RTCVD;

D O I：

10.1016/j.sna.2008.03.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel n-SiCN/p-SiCN homojunction was developed on Si Substrate for low cost and high temperature ultraviolet(UV) detecting applications. The current ratio of the junction under -5V bias, with and without irradiation of 254nm UV light are 1940 and 96.3, at room temperature and 175 degrees C, respectively. Compared to the reported UV detectors with material of 4H-SiCor beta-SiC, the developed n-SiCN/p-SiCN homojunction has better current ratio in both room and elevated temperature. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：60 / 63

页数：4

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