Stable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvement

被引：16

作者：

Chen, Szu-Yi ^{[1
]}

Chu, Ta-Ya

Chen, Jenn-Fang

Su, Chien-Ying

Chen, Chin H.

机构：

[1] Natl Chiao Tung Univ, Display Inst, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Electrophys, Hsinchu 300, Taiwan

[3] Instrument Technol Res Ctr, Natl Appl Res Labs, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 05期

关键词：

D O I：

10.1063/1.2335374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stable inverted bottom-emitting organic light-emitting diodes (IBOLEDs) have been investigated by inserting n-type Cs2O dopant between indium-tin oxide bottom cathode and Alq(3), the combination of which not only improved the morphology of organic layer but enhanced the lifetime of the IBOLED. This n-type doped IBOLED achieved efficiencies of 5.2 cd/A and 2.0 lm/W at 20 mA/cm(2). The 20% decay lifetime (t(80)) of Cs2O doped IBOLED is 270 h which is about 1.7 times more stable than that of the conventional OLED (160 h) and 2.5 times of Li doped IBOLED (104 h). (c) 2006 American Institute of Physics.

引用

页数：3

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