Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content

被引：196

作者：

Hetterich, M ^{[1
]}

Dawson, MD

Egorov, AY

Bernklau, D

Riechert, H

机构：

[1] Univ Strathclyde, Inst Photon, Glasgow G4 0NW, Lanark, Scotland

[2] Infineon Technol, Corp Res CPR 7, D-81730 Munich, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 08期

关键词：

D O I：

10.1063/1.125928

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the electronic states in strained Ga0.62In0.38N0.015As0.985/GaAs multiple- quantum-well structures using photoluminescence and (polarized) photoluminescence excitation measurements at low temperature. From a theoretical fit to the experimental data, a type-I band alignment for the heavy holes with a strained conduction-band offset ratio of about 80% is obtained, while the light holes show an approximately flat band alignment. Additionally, our results suggest an increased effective electron mass in GaInNAs, possibly due to the interaction of the conduction band with nitrogen-related resonant states, an observation prospectively of benefit for GaInNAs-based diode lasers. (C) 2000 American Institute of Physics. [S0003-6951(00)04108-5].

引用

页码：1030 / 1032

页数：3

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