GaN light-emitting diode with monolithically integrated photonic crystals and angled sidewall deflectors for efficient surface emission

被引：90

作者：

Lee, Joonhee ^{[1
,2
]}

Ahn, Sungmo ^{[1
,2
]}

Kim, Sihan ^{[1
,2
]}

Kim, Dong-Uk ^{[1
,2
]}

Jeon, Heonsu ^{[1
,2
]}

Lee, Seung-Jae ^{[3
]}

Baek, Jong Hyeob ^{[3
]}

机构：

[1] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea

[2] Seoul Natl Univ, Interuniv Semicond, Res Ctr, Seoul 151747, South Korea

[3] Korea Photon Technol Inst, Kwangju 500779, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 10期

关键词：

gallium compounds; holography; III-V semiconductors; integrated optics; light emitting diodes; optical deflectors; photonic crystals; wide band gap semiconductors; EXTRACTION EFFICIENCY; PATTERNED SAPPHIRE; MESA SIDEWALLS; FABRICATION; ULTRAVIOLET; IMPROVEMENT; SUBSTRATE; LEDS; BLUE;

D O I：

10.1063/1.3095495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to obtain efficient surface emission, we propose and demonstrate a GaN light-emitting diode (LED) structure. A two-dimensional photonic crystal (PC) pattern is integrated to the sapphire substrate before the epigrowth by employing laser holography. In addition, angled sidewall deflectors (ASDs) are formed on the mesa sidewalls. Both the PC and ASDs redirect guided photons into the surface-normal direction. When compared to a conventional LED structure, we could obtain a twofold increase in the total surface emission and the surface-normal emission intensity enhanced by a factor of 2.5.

引用

页数：3

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