Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface

被引：94

作者：

Huang, HW ^{[1
]}

Kao, CC

Chu, JI

Kuo, HC

Wang, SC

Yu, CC

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[3] True Light Corp, Hsinchu 300, Taiwan

[4] Global Union Technol Corp, Hsinchu 300, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 05期

关键词：

gallium nitride (GaN); light-emitting diode (LED); nano-mask; nickel;

D O I：

10.1109/LPT.2005.846741

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This investigation describes the development of InGaN-GaN light-emitting diode (LED) with a nano-roughened top p-GaN surface which uses Ni nano-mask and wet etching. The light output of the InGaN-GaN LED with a nano-roughened top p-GaN surface is 1.4 times that of a conventional LED, and wall-plug efficiency is 45% higher. The operating voltage of InGaN-GaN LED was reduced from 3.65 to 3.5 V at 20 mA and the series resistance was reduced by 20%. The light output is increased by the nano-roughening of the top p-GaN surface. The reduction in the series resistance can be attributed to the increase in the contact area of nano-roughened surface.

引用

页码：983 / 985

页数：3

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