Transfer characteristics and bias-stress stability of amorphous indium zinc oxide thin-film transistors

被引：22

作者：

Choi, Jun Hyuk ^{[1
]}

Bin Han, Un ^{[1
]}

Lee, Ki Chang ^{[1
]}

Lee, Joon-Hyung ^{[1
]}

Kim, Jeong-Joo ^{[1
]}

Cho, In-Tak ^{[2
]}

Lee, Jong-Ho ^{[2
]}

Heo, Young-Woo ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Mat Sci & Engn, Taegu 702701, South Korea

[2] Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu 702701, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 02期

关键词：

THRESHOLD VOLTAGE SHIFTS; FIELD-EFFECT TRANSISTOR; ROOM-TEMPERATURE; DEPENDENCE; CHANNEL;

D O I：

10.1116/1.3097852

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The transfer characteristics of amorphous indium zinc oxide thin-film transistors were investigated. The active layer in the bottom gate structure of the transistor was fabricated using room-temperature rf-magnetron sputtering. The device operated as an n-type enhancement mode exhibited a clear pinch-off behavior and an on/off ratio of similar to 10(6). The field-effect mobility of 9.6 cm(2)/V s and subthreshold slope of 0.3 V/decade were obtained. The positive threshold voltage shift was observed under the positive gate bias stress. The field-effect mobility and subthreshold slope remained nearly unchanged within the time of the gate bias stress. The time dependence of the threshold voltage shift was well matched with the stretched-exponential time dependence model. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3097852]

引用

页码：622 / 625

页数：4

共 24 条

[1] High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition [J].

Carcia, PF ;

McLean, RS ;

Reilly, MH .

APPLIED PHYSICS LETTERS, 2006, 88 (12)

[2] High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer [J].

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Jeong, J ;

Keszler, DA .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :013503-1

[3] Transparent thin-film transistors with zinc indium oxide channel layer [J].

Dehuff, NL ;

Kettenring, ES ;

Hong, D ;

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Park, CH ;

Keszler, DA .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)

[4]

DEHUFF NL, 2006, APPL PHYS LETT, V89

[5] Recent advances in ZnO transparent thin film transistors [J].

Fortunato, E ;

Barquinha, P ;

Pimentel, A ;

Gonçalves, A ;

Marques, A ;

Pereira, L ;

Martins, R .

THIN SOLID FILMS, 2005, 487 (1-2) :205-211

[6] Fully transparent ZnO thin-film transistor produced at room temperature [J].

Fortunato, EMC ;

Barquinha, PMC ;

Pimentel, ACMBG ;

Gonçalves, AMF ;

Marques, AJS ;

Pereira, LMN ;

Martins, RFP .

ADVANCED MATERIALS, 2005, 17 (05) :590-+

[7] Depletion-mode ZnO nanowire field-effect transistor [J].

Heo, YW ;

Tien, LC ;

Kwon, Y ;

Norton, DP ;

Pearton, SJ ;

Kang, BS ;

Ren, F .

APPLIED PHYSICS LETTERS, 2004, 85 (12) :2274-2276

[8] Scaling behavior of ZnO transparent thin-film transistors [J].

Hsieh, Hsing-Hung ;

Wu, Chung-Chih .

APPLIED PHYSICS LETTERS, 2006, 89 (04)

[9] Turnaround phenomenon of threshold voltage shifts in amorphous silicon thin film transistors under negative bias stress [J].

Huang, CY ;

Tsai, JW ;

Teng, TH ;

Yang, CJ ;

Cheng, HC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (10) :5763-5766

[10] Drain-bias dependence of threshold voltage stability of amorphous silicon TFTs [J].

Karim, KS ;

Nathan, A ;

Hack, M ;

Milne, WI .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (04) :188-190

← 1 2 3 →