Positive and negative persistent photoconductivity in a two-side-doped In0.53Ga0.47As/In0.52Al0.48As quantum well

被引：6

作者：

Hang, DR ^{[1
]}

Chen, YF

Fang, FF

Wang, WI

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

[2] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.60.13318

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present detailed studies of the persistent photoconductivity effect in In0.53Ga0.47As/In0.52Al0.48As quantum well, including wavelength, temperature, and time dependencies. We found conclusive results that show competition between the positive and negative persistent photoconductivity effects. We suggest that a complete understanding of the decay and buildup kinetics in the entire temperature region must incorporate both the positive and negative effects. We conclude that the major positive effect is due to the band-to-band electron-hole generation in the well layer followed by the spatial charge separation and the negative effect is related to the pumping of the two-dimensional electrons into the doped barrier layer followed by the decrease of mobility. [S0163-1829(99)03443-8].

引用

收藏

页码：13318 / 13321

页数：4

相关论文

共 11 条

[1] NEGATIVE PHOTOCONDUCTIVITY IN SEMICONDUCTOR HETEROSTRUCTURES [J].

CHAVES, AS ;

CHACHAM, H .

APPLIED PHYSICS LETTERS, 1995, 66 (06) :727-729

[2] OBSERVATION OF NEGATIVE PERSISTENT PHOTOCONDUCTIVITY IN AN N-CHANNEL GAAS/ALXGA1-XAS SINGLE HETEROJUNCTION [J].

CHEN, J ;

YANG, CH ;

WILSON, RA ;

YANG, MJ .

APPLIED PHYSICS LETTERS, 1992, 60 (17) :2113-2115

[3] THE LONG-TERM RELAXATION AND BUILDUP TRANSIENT OF PHOTOCONDUCTIVITY IN SI1-XGEX/SI QUANTUM-WELLS [J].

CHU, LH ;

CHEN, YF ;

CHANG, DC ;

CHANG, CY .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1995, 7 (23) :4525-4532

[4] COMPETITION BETWEEN NEGATIVE AND POSITIVE PHOTOCONDUCTIVITY IN SILICON PLANAR-DOPED GAAS [J].

DEOLIVEIRA, AG ;

RIBEIRO, GM ;

SOARES, DAW ;

CHACHAM, H .

APPLIED PHYSICS LETTERS, 1994, 64 (17) :2258-2260

[5] KINETICS OF PERSISTENT PHOTOCONDUCTIVITY IN AL0.3GA0.7AS AND ZN0.3CD0.7SE SEMICONDUCTOR ALLOYS [J].

DISSANAYAKE, A ;

ELAHI, M ;

JIANG, HX ;

LIN, JY .

PHYSICAL REVIEW B, 1992, 45 (24) :13996-14004

[6] PERSISTENT PHOTOCONDUCTIVITY IN ZN0.04CD0.96TE SEMICONDUCTOR THIN-FILMS [J].

DISSANAYAKE, AS ;

LIN, JY ;

JIANG, HX .

PHYSICAL REVIEW B, 1993, 48 (11) :8145-8151

[7] PERSISTENT PHOTOCONDUCTIVITY IN THIN UNDOPED GAINP/GAAS QUANTUM-WELLS [J].

ELHAMRI, S ;

AHOUJJA, M ;

RAVINDRAN, K ;

MAST, DB ;

NEWROCK, RS ;

MITCHEL, WC ;

BROWN, GJ ;

LO, I ;

RAZEGHI, M ;

HE, XG .

APPLIED PHYSICS LETTERS, 1995, 66 (02) :171-173

[8] RELAXATION OF PERSISTENT PHOTOCONDUCTIVITY IN AL0.3GA0.7AS [J].

LIN, JY ;

DISSANAYAKE, A ;

BROWN, G ;

JIANG, HX .

PHYSICAL REVIEW B, 1990, 42 (09) :5855-5858

[9] 2ND SUBBAND POPULATION IN DELTA-DOPED AL0.48IN0.52AS/GA(0.47)IN(0.5)3AS HETEROSTRUCTURES [J].

LO, I ;

MITCHEL, WC ;

AHOUJJA, M ;

CHENG, JP ;

FATHIMULLA, A ;

MIER, H .

APPLIED PHYSICS LETTERS, 1995, 66 (06) :754-756

[10] PERSISTENT PHOTOCONDUCTIVITY AND THE QUANTIZED HALL-EFFECT IN IN0.53GA0.47AS/INP HETEROSTRUCTURES [J].

WEI, HP ;

TSUI, DC ;

RAZEGHI, M .

APPLIED PHYSICS LETTERS, 1984, 45 (06) :666-668