COMPETITION BETWEEN NEGATIVE AND POSITIVE PHOTOCONDUCTIVITY IN SILICON PLANAR-DOPED GAAS

被引：12

作者：

DEOLIVEIRA, AG

RIBEIRO, GM

SOARES, DAW

CHACHAM, H

机构：

[1] Departamento de Física, Instituto de Ciências Exatas, Universidade Federal de Minas Gerais, 30161-970 Belo Horizonte

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 17期

关键词：

D O I：

10.1063/1.111637

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photo-Hall free electron concentrations were measured on molecular beam epitaxy grown silicon planar-doped GaAs samples, with silicon nominal concentration ranging from 1.4 x 10(12) to 8.8 X 10(13) cm-2, as function of temperature. We found conclusive results showing competition between positive photoconductivity and negative persistent photoconductivity effects. At temperatures below a critical T(c), the negative photoconductivity effect is dominant, while above T(c) the positive effect dominates. We also found some evidence that the positive effect is related to spatial charge separation and that the negative effect is related to the DX center.

引用

页码：2258 / 2260

页数：3

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