The growth and investigation of SiGe films on buried Ge islands

被引：4

作者：

Huang, JY ^{[1
]}

Ye, ZZ ^{[1
]}

Chen, WH ^{[1
]}

Qi, Z ^{[1
]}

Lu, HM ^{[1
]}

Lei, W ^{[1
]}

Zhao, BH ^{[1
]}

Que, DL ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 206卷 / 04期

基金：

中国国家自然科学基金;

关键词：

SiGe; Ge islands; UHV/CVD;

D O I：

10.1016/S0022-0248(99)00338-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

SiGe/Si films on buried Ge islands on Si substrates were deposited using an ultrahigh vacuum chemical vapor deposition system at a temperature of 620 degrees C in comparison with a single-step SiGe film with the same Ge content and growth temperature. X-ray diffraction measurements show that the crystalline quality of the Sice films on the buried Ge islands was better than that without buffers, and the top SiGe films were relaxed. The high-resolution cross-sectional transmission electron microscopy images show that the size of the three dimension Ge islands is about 60 nm and the top SiGe film on buried Ge islands is better crystallographically than that grown without buffers. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：294 / 298

页数：5

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