Titanium-hydrogen defects in silicon

被引：36

作者：

Jost, W

Weber, J

机构：

[1] Max-Planck-Institut für Festkörperforschung, D-70506 Stuttgart

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.54.R11038

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Several titanium-hydrogen (TiH) complexes are generated in crystalline Si by wet chemical etching or a remote hydrogen plasma treatment. We identify two electrically active (E(C)-0.31 eV, E(C)-0.57 eV) and one electrically inactive TiH complex. The passive TiH complex dissociates at temperatures above 570 K, leading to an increase in the interstitial Ti concentration.

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页码：11038 / 11041

页数：4

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