TITANIUM GETTERING IN SILICON - INVESTIGATION BY DEEP LEVEL TRANSIENT SPECTROSCOPY AND SECONDARY ION MASS-SPECTROSCOPY

被引：4

作者：

LEO, K ^{[1
]}

SCHINDLER, R ^{[1
]}

KNOBLOCH, J ^{[1
]}

VOSS, B ^{[1
]}

机构：

[1] FRAUNHOFER INST SOLARE ENERGIESYST,D-7800 FREIBURG,FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 08期

关键词：

D O I：

10.1063/1.339292

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3472 / 3474

页数：3

共 9 条

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[5] GOLD GETTERING IN SILICON BY PHOSPHORUS DIFFUSION AND ARGON IMPLANTATION - MECHANISMS AND LIMITATIONS [J].

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[6]

Leo K., 1987, Seventh E.C. Photovoltaic Solar Energy Conference. Proceedings of the International Conference (EUR-10939-EN), P1070

[7]

MONKOWSKI JR, 1981, SOLID STATE TECHNOL, V7, P44

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Rohatgi A., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P908

[9] COMPLETE ELECTRICAL CHARACTERIZATION OF RECOMBINATION PROPERTIES OF TITANIUM IN SILICON [J].

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JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :1021-1031

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