DEPTH PROFILES OF INTERSTITIAL OXYGEN CONCENTRATIONS IN SILICON SUBJECTED TO 3-STEP ANNEALING

被引：34

作者：

ISOMAE, S

AOKI, S

WATANABE, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 04期

关键词：

D O I：

10.1063/1.333177

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：817 / 824

页数：8

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