GISAXS study of cavities and {113} defects induced by neon and helium implantation in silicon

被引：16

作者：

Babonneau, David

Peripolli, Suzana

Beaufort, Marie-France

Barbot, Jean-Francois

Simon, Jean-Paul

机构：

[1] Univ Poitiers, CNRS, UMR 6630, Met Phys Lab, F-86962 Futuroscope Chasseneui, France

[2] Univ Fed Rio Grande do Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

[3] UJF, INPG, CNRS UMR 5614, Lab Thermodynam & Physicochim Met, F-38402 St Martin Dheres, France

来源：

JOURNAL OF APPLIED CRYSTALLOGRAPHY | 2007年 / 40卷

关键词：

D O I：

10.1107/S0021889806043755

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Grazing incidence small-angle X-ray scattering experiments have been performed to study the morphology of nanocavities and {113} defects formed by implantation of 5 x 10(16) cm(-2) neon and helium ions in Si(001) at 50 keV. The results show that spherical cavities are formed in Si(001) implanted with Ne ions at 873 K and in Si( 001) implanted with He ions at 473 K subsequently annealed at 873 K. In contrast, He-induced cavities at 873 K show {111} facets and wide size distribution due to an enhanced He mobility at high temperature. In addition to the faceted cavities, the clustering of interstitials leads to the formation of large extended planar {113} defects whose size has been estimated to be about 100 nm.

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收藏

页码：S350 / S354

页数：5

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