Dependence of AlGaN-based SAW oscillator frequency on temperature

被引：3

作者：

Rimeika, R

Sereika, A

Kazdailis, P

Fareed, Q

Gaska, R

Ciplys, D

Shur, MS

机构：

[1] Sensor Elect Technol Inc, Columbia, SC 29209 USA

[2] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 10期

关键词：

D O I：

10.1049/el:20040394

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A SAW delay-line oscillator based on an AlxGa1-xN-on-sapphire structure is presented and its frequency dependence on temperature has been measured. The temperature coefficient of frequency -69 ppm/K has been found for the AlxGa1-xN layer thickness 1.7 mum, Al molar amount x = 0.5, and operation frequency 226 MHz.

引用

收藏

页码：637 / 638

页数：2

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