Current transport properties of Pd/3C-SiC Schottky junctions with planar and vertical structures

被引：26

作者：

Roy, S ^{[1
]}

Jacob, C ^{[1
]}

Basu, S ^{[1
]}

机构：

[1] Indian Inst Technol, Ctr Mat Sci, Kharagpur 721302, W Bengal, India

来源：

SOLID STATE SCIENCES | 2004年 / 6卷 / 04期

关键词：

3C-SiC; pd Schottky; current transport; interface defects; SBH inhomogeneity;

D O I：

10.1016/j.solidstatesciences.2004.01.003

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Palladium Schottky contacts were fabricated on 3C-SiC heteroepitaxial layers (grown on Si substrates) and characterized by current-voltage measurements. The effects of epitaxial layer thickness and the device configuration on the diode parameters were investigated and analyzed in terms of the interfacial defect density. The influence of operating temperature on the I-V characteristics of the Schottky junctions were studied and the apparent anomalies in temperature dependence of barrier height and ideality factor were explained with the model of localized inhomogeneities of barrier height over the Schottky contact region. (C) 2004 Elsevier SAS. All rights reserved.

引用

页码：377 / 382

页数：6

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