Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

被引：37

作者：

Castiglia, A. ^{[1
]}

Feltin, E. ^{[1
]}

Cosendey, G. ^{[1
]}

Altoukhov, A. ^{[1
]}

Carlin, J. -F. ^{[1
]}

Butte, R. ^{[1
]}

Grandjean, N. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 19期

基金：

瑞士国家科学基金会;

关键词：

aluminium compounds; claddings; gallium compounds; III-V semiconductors; indium compounds; semiconductor lasers; DEPENDENCE; QUALITY; DIODES;

D O I：

10.1063/1.3138136

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitride-based blue laser diode structures with either Al0.83In0.17N/Al0.07Ga0.93N or Al0.87In0.13N bottom claddings have been fabricated and compared to standard structures including solely Al0.07Ga0.93N bottom claddings. Lasing emission at 415 nm is achieved in gain-guided structures at room temperature under pulsed current injection. Devices including the Al0.83In0.17N/Al0.07Ga0.93N bottom cladding exhibit superior device performance. This is a consequence of a better optical mode confinement, as expected from modeling.

引用

页数：3

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