Theoretical analysis of the detectivity in N-p and P-n GaSb/GaInAsSb infrared photodetectors

被引：26

作者：

Tian, Y ^{[1
]}

Zhang, BL ^{[1
]}

Zhou, TM ^{[1
]}

Jiang, H ^{[1
]}

Jin, YX ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Phys, Changchun 130021, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 03期

关键词：

D O I：

10.1109/16.824726

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the detectivity as well as the quantum efficiency and the zero-bias resistance-area product in N-p and P-n GaSb/Ga0.8In0.2As0.19Sb0.81 infrared detectors is analyzed, based on the incident wavelength and the parameters of GaSb and Ga0.8In0.2As0.19Sb0.81. The results show that the detectivity for the N-p structure is much higher than that for the P-n structure. In addition, the tunneling mechanism in both heterostructures strongly decreases the performance of Ga0.8In0.2As0.Sb-19(0.81)/GaSb detectors. The optimum detectivity is obtained when the zero-bias resistance-area product is limited by the generation-recombination mechanism. Furthermore, the detectivity in the N-p heterostructure is saturated with a small thickness of p-Ga0.8In0.2As0.19Sb0.81 while the one in the P-n heterostructure is maximum with the thickness of n-Ga0.8In0.2As0.19Sb0.81 in the range of 2.5-3 mu m.

引用

页码：544 / 552

页数：9

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