共 23 条
[1]
ABSORPTION CONSTANT OF PB1-XSNXTE AND HG1-XCDXTE ALLOYS
[J].
INFRARED PHYSICS,
1980, 20 (06)
:363-372
[3]
BEHRENDT R, 1978, 6TH P S IMEKO TECHN
[6]
INTERBAND ABSORPTION-EDGE IN PB1-XSNX TE EPITAXIAL LAYERS
[J].
PHYSICA STATUS SOLIDI B-BASIC RESEARCH,
1978, 86 (01)
:K21-K25
[7]
PHOTO-VOLTAIC DETECTORS PB1-XSNXTE (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) MINORITY-CARRIER LIFETIMES - RESISTANCE-AREA PRODUCT
[J].
INFRARED PHYSICS,
1981, 21 (01)
:1-8
[8]
GRUDZIEN M, 1980, ACTA PHYS POL A, V58, P765
[9]
COMPARISON OF SCHOTTKY-BARRIER AND DIFFUSED JUNCTION INFRARED DETECTORS
[J].
INFRARED PHYSICS,
1979, 19 (05)
:545-548
[10]
Hovel H.J., 1975, SEMICONDUCTORS SEMIM, V11