Photoluminescence up-conversion of single InAs/GaAs quantum dots

被引：6

作者：

Cassabois, G

Kammerer, C

Voisin, C

Delalande, C

Roussignol, P

Gérard, JM

机构：

[1] Ecole Normale Super, Lab Phys & Mat Condensee, F-75231 Paris 05, France

[2] CNRS, LPN, F-92225 Bagneux, France

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期

关键词：

quantum dots; up-conversion; micro-photoluminescence;

D O I：

10.1016/S1386-9477(01)00497-0

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report the observation of an efficient photoluminescence up-conversion in single InAs/GaAs quantum dots by micro-photoluminescence measurements under cw-excitation. Power dependent measurements show a nearly quadratic dependence of the up-converted photoluminescence signal from the quantum dots (QDs). The intermediate states that allow the efficient photoluminescence up-conversion are deep electronic states located at the vicinity of the QDs, This observation of photoluminescence up-conversion demonstrates the influence on the quantum dot properties of its environment. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：105 / 108

页数：4

共 8 条

[1] Dynamics of anti-Stokes photoluminescence in type-II AlxGa1-xAs-GaInP2 heterostructures: The important role of long-lived carriers near the interface [J].