Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications

被引：73

作者：

Katsia, E. ^{[1
]}

Huby, N. ^{[1
]}

Tallarida, G. ^{[1
]}

Kutrzeba-Kotowska, B. ^{[1
]}

Perego, M. ^{[1
]}

Ferrari, S. ^{[1
]}

Krebs, F. C. ^{[2
]}

Guziewicz, E. ^{[3
]}

Godlewski, M. ^{[3
]}

Osinniy, V. ^{[3
]}

Luka, G. ^{[3
]}

机构：

[1] CNR INFM, Lab Nazl MDM, I-20041 Agrate Brianza, Italy

[2] Tech Univ Denmark, Riso Natl Lab Sustainable Energy, DK-4000 Roskilde, Denmark

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 14期

关键词：

atomic layer deposition; band structure; current density; II-VI semiconductors; organic semiconductors; organic-inorganic hybrid materials; p-n heterojunctions; rectification; wide band gap semiconductors; zinc compounds; ATOMIC LAYER DEPOSITION; FIELD-EFFECT TRANSISTORS; CONJUGATED POLYMERS; HIGH-DENSITY; AMBIPOLAR; MOBILITY; DEVICES; DIODES; ZNO;

D O I：

10.1063/1.3114442

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hybrid poly(3-hexylthiophene)/ZnO devices are investigated as rectifying heterojunctions for microelectronics applications. A low-temperature atomic layer deposition of ZnO on top of poly(3-hexylthiophene) allows the fabrication of diodes featuring a rectification ratio of nearly 10(5) at +/- 4 V and a current density of 10(4) A/cm(2). Electrical characteristics are discussed taking into account the chemical structure of the stack and the energy band diagram.

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页数：3

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