Study on titanium salicide process for thin-film SOI devices

TFSOI (Thin-Film Silicon-On-Insulator) technology has made significant progress recently. In this work, the titanium SALICIDE (Self-Aligned siLICIDE) process has been studied, optimized and applied on a CMOS-compatible TFSOI technology for low-voltage, low-power microwave applications. The gate sheet resistance and total source/drain series resistance of a TFSOI NMOSFET with a 80 nm thick active silicon layer are 6.2 Omega/square and 700 Omega.mu m, respectively, with a 30 nm thick titanium disilicide on both the gate and source/drain areas. The maximum oscillation frequency, f(max), of a 0.75 mu m TFSOI NMOSFET fabricated with this technology is equal to 11 GHz for a supply voltage of 0.9 V.