Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain

被引：61

作者：

Maeda, Tatsuro ^{[1
]}

Ikeda, Keiji

Nakaharai, Shu

Tezuka, Tsutomu

Sugiyama, Naoharu

Moriyama, Yoshihiko

Takagi, Shinichi

机构：

[1] Natl Inst Adv Ind Sci & Technol, MIRAI Project, Adv Semicond Res Ctr, Tsukuba, Ibaraki 3058562, Japan

[2] Natl Inst Adv Ind Sci & Technol, MIRAI Project, Assoc Super Adv Elect Technol, Tsukuba, Ibaraki 3058569, Japan

[3] ASET, MIRAI Project, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan

[4] Univ Tokyo, Bunkyo Ku, Tokyo 1138656, Japan

来源：

THIN SOLID FILMS | 2006年 / 508卷 / 1-2期

关键词：

Ge; Schottky barrier; thin-body Ge-on-insulator; MOSFET;

D O I：

10.1016/j.tsf.2005.07.339

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ge-on-insulator (GOI) layer by the Ge-condensation technique is characterized from the viewpoint of the carrier transport. We fabricate GOI channel metal-oxide-semiconductor field-effect transistors (MOSFETs) featuring ultra-low Schottky barrier metal source/drain for holes using Pt germanide where a buried oxide and a silicon substrate are used as a gate dielectric and a bottom gate electrode, respectively. P-type and N-type channel MOSFET operations in the accumulation and inversion mode, respectively, are demonstrated successfully, according to Schottky barrier heights for each carrier. Hall measurement for the GOI layers indicates the existence of relatively high carrier density of holes, 1.3 x 10(17) cm(-1), which is not attributable to doped impurities. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：346 / 350

页数：5

共 19 条

[1] Activation and diffusion studies of ion-implanted p and n dopants in germanium [J].