Low-frequency noise in AlGaN/GaN MOS-HFETs

被引：33

作者：

Pala, N ^{[1
]}

Gaska, R

Rumyantsev, S

Shur, MS

Khan, MA

Hu, X

Simin, G

Yang, J

机构：

[1] Rensselaer Polytech Inst, Dept ECSE, Troy, NY 12180 USA

[2] Rensselaer Polytech Inst, CIEEM, Troy, NY 12180 USA

[3] Univ S Carolina, Dept ECE, Columbia, SC 29208 USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 03期

关键词：

D O I：

10.1049/el:20000171

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comparative study is presented of low-frequency noise in GaN-based metal-oxide-semiconductor heterostructure field effect transistors (MOS-HFETs) and HFETs. The Hooge parameter at zero gate bias was of the order of 10(-3) for both types of device. Shr AlGaN/GaN MOS-HFETs exhibited extremely low gate leakage current and much lower noise at both positive and negative gate biases.

引用

页码：268 / 270

页数：3

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