Secondary electron emission properties of III-nitride/ZnO coaxial hetero structures under ion and X-ray bombardment

被引:5
作者
Cholewa, M.
Moser, H. O.
Huang, Lie
Lau, Shu Ping
Yoo, Jinkyoung
An, Sung Jin
Yi, Gyu-Chul
Gao Xingyu
Wee, A. T. S.
Bettiol, A.
Watt, F.
Fischer, B.
机构
[1] Natl Univ Singapore, Singapore Synchrotron Light Source, Singapore 117603, Singapore
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore, Singapore
[3] Pohang Univ Sci & Technol, Natl CRI Ctr Semicond Nanorods, Pohang, South Korea
[4] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang, South Korea
[5] Natl Univ Singapore, NUSSNI, Dept Phys, Singapore 117548, Singapore
[6] Natl Univ Singapore, CIBA, Dept Phys, Singapore 117548, Singapore
[7] GSI Darmstadt, D-6100 Darmstadt, Germany
关键词
nanomaterials; secondary electron production; radiation detectors;
D O I
10.1016/j.nimb.2006.09.014
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 [仪器科学与技术]; 080401 [精密仪器及机械]; 081102 [检测技术与自动化装置];
摘要
The secondary electron emission (SEE) yield of heterostructures of zinc oxide (ZnO) nanoneedles coaxially coated with aluminum nitride (AIN) or gallium nitride (GaN) has been studied using ion and X-ray beams. This paper describes experiments performed with ions (2 MeV protons and 3.6 MeV/nucleon carbon beams) and photons (synchrotron radiation at approximate to 1 keV). The SEE yield of the heterostructures is enhanced significantly by the intrinsic nanostructure of the ZnO nanoneedle templates as compared to the AIN and GaN thin films on silicon (Si) substrates [T.J. Vink, R.G.F.A. Verbeek, V. Elsbergen, P.K. Bachmann, Appl. Phys. Lett. 83 (2003) 2285]. One of the mechanisms responsible for SEE yield enhancement can be attributed to the larger area of the nanostructured surface. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:55 / 58
页数:4
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