Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented InGaAs/GaAs heterostructures

被引：4

作者：

Guimaraes, FEG

GonzalezBorrero, PP

Lubyshev, D

Basmaji, P

机构：

[1] Inst. de Fisica de São Carlos, Universidade de São Paulo, 13560-970, São Carlos, SP

来源：

SOLID-STATE ELECTRONICS | 1996年 / 40卷 / 1-8期

基金：

巴西圣保罗研究基金会;

关键词：

D O I：

10.1016/0038-1101(95)00382-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of surface orientation and surface structure on indium segregation and alloy properties were systematically studied in InGaAs/GaAs quantum well structures grown by molecular beam epitaxy. (100), (311)A and (311)B surface orientations and different approaches in the growth interruption at the interfaces were used in this investigation. The segregation process and alloy parameters were obtained by photoluminescence and RHEED measurements. We find significant differences in the optical properties and growth kinetic for the three orientations. Using growth interruption we were able to change the surface structure and reduce the segregation process for all orientations.

引用

页码：659 / 663

页数：5

共 13 条

[1] INDIUM ADATOM MIGRATION DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRAINED INGAAS/GAAS SINGLE QUANTUM WELLS [J].