RAMAN-SCATTERING FROM HEAVILY DOPED (311) GAAS-SI GROWN BY MOLECULAR-BEAM EPITAXY

被引：6

作者：

KWOK, SH ^{[1
]}

MERLIN, R ^{[1
]}

LI, WQ ^{[1
]}

BHATTACHARYA, PK ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 01期

关键词：

D O I：

10.1063/1.352131

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Raman scattering by localized vibrational modes and plasmons has been used to characterize heavily p- and n-type silicon-doped (311)A GaAs layers grown by molecular beam epitaxy. Consistent with the doping character, p-type samples show two modes associated with Si(As) and the complex defect Si-X. Acceptor-related lines were not observed in n-type samples, an indication that compensation levels in the layers are very low. The results are discussed in relation to growth conditions on (311)A surfaces.

引用

页码：285 / 286

页数：2

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